AMAT 0010-23716: Technical Specifications
- Component Type
- Category: Vacuum Pump Interface Module or High-Precision Pressure Control Valve
- Function: Manages vacuum levels and gas flow between the process chamber and exhaust systems.
- Material: Stainless steel (316L), aluminum alloy, and high-temperature elastomers (e.g., Viton® or Kalrez® seals) for chemical resistance.
- Physical Specifications
- Dimensions: Compact modular design (approx. 200 mm × 150 mm × 80 mm) for integration into cluster tools.
- Weight: 2.0–3.5 kg (optimized for ease of installation and maintenance).
- Operating Parameters
- Pressure Range:
- High Vacuum: ≤ 10⁻⁶ Torr (compatible with turbo-molecular pumps).
- Process Pressure: Adjustable from 10⁻³ Torr to 10 Torr for dynamic process control.
- Temperature Tolerance: -40°C to 200°C (operational), with thermal shielding for stability.
- Flow Rate: Up to 500 standard liters per minute (SLM) for rapid chamber evacuation.
- Pressure Range:
- Compatibility
- Process Gases: Compatible with inert (Ar, N₂), corrosive (Cl₂, HBr), and pyrophoric (SiH₄, WF₆) gases.
- Tool Integration: Designed for AMAT Endura® or Producer® platforms.
- Connections: ISO-KF or CF flanges with metal gaskets for leak-tight sealing (helium leak rate < 1×10⁻⁹ mbar·L/s).
- Control & Automation
- Actuation: Pneumatic or electric actuator for precise valve positioning (±0.1% accuracy).
- Sensors: Integrated pressure transducers for real-time feedback to the tool’s PLC (Programmable Logic Controller).
- Certifications & Standards
- Complies with SEMI F57-0307 (particle and contamination control).
- RoHS/REACH compliant (hazardous substance-free).
- Lifetime & Maintenance
- Service Life: ~5–8 years under standard operating conditions (depends on gas aggressiveness and cycle frequency).
- Maintenance: Replace seals annually; lubricant-free design minimizes particle generation.
Functional Overview
The AMAT 0010-23716 is a critical component for maintaining precise vacuum and gas flow control in semiconductor manufacturing processes. Key functionalities include:
- Dynamic Vacuum Control
- Enables rapid pump-down and precise pressure adjustments during chamber transitions (e.g., load-lock to process chamber).
- Ensures stable process environments for etching, deposition, or implantation steps.
- Process Stability
- Minimizes pressure fluctuations (<±0.5% deviation) during critical steps (e.g., ALD cycles or high-aspect-ratio etches).
- Prevents backflow of contaminants into the chamber via fail-safe valve mechanisms.
- Corrosion Resistance
- Engineered for compatibility with aggressive chemistries (e.g., HCl, O₃) used in advanced node fabrication.
- High Throughput
- Supports fast chamber evacuation and refill cycles, reducing wafer process time in high-volume manufacturing.
- Applications
- Dielectric Etch: Oxygen-based plasmas for organic film removal.
- Metal Deposition: Precise pressure control during PVD (sputtering) of Cu or Al interconnects.
- Chamber Cleaning: Manages exhaust flows during NF₃ plasma cleans.
Critical Notes
- Safety: This component may interface with hazardous gases; ensure adherence to AMAT’s safety protocols (e.g., gas detection systems and purge routines).
- Calibration: Requires periodic alignment with the tool’s pressure sensors to maintain accuracy.
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