AMAT 0021-53986 High voltage RF filtering module

AMAT 0021-53986: Technical Specifications

1. Component Type
   • Category: Electrostatic Chuck (ESC) Power Supply or High-Voltage RF Filter Module
   • Purpose: Manages power delivery for wafer clamping (electrostatic chuck) or filters RF noise in plasma-based systems.
   • Material: Anodized aluminum housing with high-voltage insulation (e.g., PTFE or ceramic insulators).
2. Electrical Specifications
   • Input Voltage: 100–240 VAC, 50/60 Hz (universal input).
   • Output Voltage: 
     • For ESC: DC bias up to ±3000 V (adjustable for wafer clamping).
     • For RF Filter: Attenuates noise across 1–60 MHz bandwidth.
   • Current Rating: Up to 10 A continuous (ESC applications).
   • Frequency Response: 99% noise suppression at RF harmonics (for filter modules).
3. Environmental & Mechanical
   • Operating Temperature: 0°C to 50°C (cooling fans or liquid-cooled options available).
   • Humidity Tolerance: 10–90% non-condensing.
   • Dimensions: 400 mm × 200 mm × 100 mm (rack-mountable design).
   • Weight: 8–12 kg (varies with cooling system).
4. Compatibility
   • Tool Integration: AMAT Centura® or Producer® platforms for etch, CVD, or PVD processes.
   • Communication: RS-485, Ethernet/IP, or proprietary AMAT protocols for system control.
   • Safety: Arc detection and rapid shutdown (<1 ms response time).
5. Certifications & Standards
   • Complies with SEMI S2/S8 (equipment safety) and SEMI F47 (voltage sag immunity).
   • CE, UL, and RoHS certified.
6. Lifetime & Maintenance
   • Service Life: 7–10 years under normal operating conditions.
   • Maintenance: Annual inspection of capacitors and cooling systems; firmware updates via AMAT service tools.

Functional Overview

The AMAT 0021-53986 is a critical subsystem enabling stable wafer processing in plasma environments. Key functionalities include:

1. Electrostatic Chuck Control (ESC Applications)
   • Generates high-voltage DC fields to clamp wafers securely during high-precision processes (e.g., etching or deposition).
   • Adjustable voltage compensates for wafer bowing or backside gas leakage, ensuring uniform thermal contact.
2. RF Noise Suppression (Filter Applications)
   • Filters electromagnetic interference (EMI) from RF plasma sources, protecting sensitive electronics and improving process repeatability.
   • Minimizes arcing risks in high-power plasma systems (e.g., HDP-CVD or reactive ion etching).
3. Thermal Management
   • Monitors and regulates chuck temperature via integrated sensors (supports helium backside cooling systems).
   • Maintains wafer temperature uniformity (±1°C) for critical steps like photoresist curing or oxide growth.
4. Process Flexibility
   • Compatible with multiple wafer sizes (200mm/300mm) and materials (Si, GaN, glass substrates).
   • Supports pulsed DC or RF bias for advanced processes (e.g., ion implantation, atomic layer etch).
5. Applications
   • Plasma Etch: Ensures wafer stability during high-aspect-ratio via etching for 3D NAND or FinFETs.
   • CVD/PVD: Maintains wafer flatness during thin-film deposition (e.g., SiO₂, TiN).
   • Lithography: Clamps wafers for EUV or deep-UV lithography steps.

Critical Notes

• Safety: High-voltage components require trained personnel for installation and maintenance.
• Calibration: Requires periodic alignment with tool-specific plasma impedance settings.