AMAT 0090-07135 RF matching network/plasma source component

AMAT 0090-07135: Technical Specifications

1. Component Type
   • Category: RF (Radio Frequency) Matching Network or Plasma Source Component
   • Purpose: Optimizes RF power delivery to sustain stable plasma during etching or deposition processes.
   • Material: High-frequency ceramic insulators (e.g., Al₂O₃) and corrosion-resistant metal alloys (e.g., anodized aluminum).
2. Physical Specifications
   • Dimensions: Modular design (approx. 300 mm x 200 mm x 100 mm) for integration into cluster tools.
   • Weight: 5–8 kg (dependent on cooling system integration).
3. Electrical & Operational Parameters
   • Frequency Range: 2–60 MHz (adjustable for impedance matching).
   • Power Handling: Up to 5 kW continuous RF power (peak power tolerance: 8 kW).
   • Impedance Matching: Auto-tuning capability to maintain VSWR (Voltage Standing Wave Ratio) <1.5:1.
   • Cooling System: Liquid-cooled (deionized water or glycol) to manage thermal load.
4. Environmental Compatibility
   • Vacuum Compatibility: Operates in high-vacuum environments (base pressure ≤ 10⁻⁶ Torr).
   • Temperature Range: -20°C to 150°C (operational); up to 300°C short-term exposure.
5. Integration & Interfaces
   • Tool Platforms: Compatible with AMAT Centura® or Versa® etch/deposition systems.
   • Control Interface: Digital communication protocols (e.g., SECS/GEM, Ethernet/IP) for real-time process monitoring.
6. Certifications & Standards
   • Complies with SEMI S2/S8 (safety and ergonomic standards).
   • CE/UL certified for electrical safety.
7. Lifetime & Maintenance
   • Service Life: ~15,000–20,000 process hours (varies with plasma intensity and thermal cycling).
   • Maintenance: Quarterly inspections recommended (e.g., capacitor health, coolant purity).

Functional Overview

The AMAT 0090-07135 is critical for advanced plasma-based processes in semiconductor manufacturing, ensuring high process stability and uniformity. Key functionalities include:

1. Plasma Stabilization
   • Automatically adjusts RF power delivery to maintain consistent plasma density, essential for uniform etching (e.g., anisotropic silicon etch) or deposition (PECVD).
   • Minimizes arcing and process drift, reducing wafer defects.
2. Impedance Matching
   • Real-time impedance tuning compensates for load variations caused by chamber conditions or wafer materials (e.g., low-k dielectrics, copper interconnects).
3. High-Power Efficiency
   • Enables high-throughput processing with minimal energy loss, critical for 3D NAND or advanced logic nodes (3nm/2nm).
4. Process Flexibility
   • Supports both low-frequency (bias control) and high-frequency (plasma generation) regimes for multi-step processes.
5. Applications
   • Etch Processes: Deep silicon etch (TSV), dielectric etch (SiO₂, Si₃N₄).
   • Deposition Processes: PECVD of SiO₂, SiN, or low-k films.
   • Chamber Cleaning: NF₃/O₂ plasma cleans.