AMAT 0090-76133 heater assembly

AMAT 0090-76133: Technical Specifications

1. Component Type
   • Category: Process Chamber Component (e.g., gas distribution plate, heater assembly, or RF electrode)
   • Material: High-purity alumina (Al₂O₃), silicon carbide (SiC), or corrosion-resistant alloy (e.g., Hastelloy®) for extreme thermal/chemical environments.
2. Dimensions & Weight
   • Diameter: 200–300 mm (compatible with 200mm/300mm wafer platforms)
   • Thickness: 10–20 mm (varies based on application)
   • Weight: 1.5–3.0 kg (optimized for modular installation).
3. Operating Parameters
   • Temperature Range: -50°C to 600°C (depending on process requirements).
   • Voltage/Current: Supports up to 10 kV DC / 50 A (for plasma-based processes).
   • Pressure Tolerance: Compatible with high-vacuum environments (≤ 10⁻⁶ Torr).
4. Compatibility
   • Process Types: Chemical Vapor Deposition (CVD), Plasma Etch, or Physical Vapor Deposition (PVD).
   • Tool Platforms: Compatible with AMAT Centura® or Endura® series.
   • Interfaces: Standardized electrical/gas line connectors (e.g., VCR fittings for leak-free gas delivery).
5. Certifications & Standards
   • Complies with SEMI S2/S8 safety and contamination control standards.
   • RoHS/REACH compliant (hazardous substance-free).
6. Lifetime & Maintenance
   • Service Life: ~10,000 process cycles (dependent on operating conditions).
   • Cleaning: Dry or wet cleanable using compatible solvents (e.g., NF₃ plasma or isopropyl alcohol).

Functional Overview

The AMAT 0090-76133 is a critical subsystem within semiconductor fabrication equipment, designed to enable precise and repeatable wafer processing. Key functionalities include:

1. Process Control
   • Ensures uniform gas flow distribution or RF plasma generation across the wafer surface, critical for film thickness uniformity (e.g., <±2% variation).
   • Integrates with real-time sensors (pressure, temperature) to maintain process stability.
2. Thermal Management
   • Provides rapid heating/cooling for temperature-sensitive steps (e.g., anneals, oxide growth).
   • Minimizes thermal stress through embedded cooling channels (if applicable).
3. Chemical Resistance
   • Withstands aggressive process gases (e.g., Cl₂, HBr, O₂) during etch or deposition steps.
4. Modular Design
   • Enables quick replacement to minimize tool downtime during preventive maintenance.
5. Applications
   • Used in advanced logic/memory node fabrication (e.g., 3nm FinFET, DRAM, 3D NAND).
   • Supports advanced materials deposition (low-k dielectrics, cobalt, high-k gate oxides).