AMAT 0100-09145 Mass flowmeter

AMAT 0100-09145: Technical Specifications

1. Component Type
   • Category: Gas Flow Controller or Mass Flow Meter (MFM)
   • Purpose: Precisely regulates and monitors the flow rate of process gases in semiconductor manufacturing tools.
   • Material: Stainless steel (316L) body, fluoropolymer seals (e.g., Kalrez®), and ceramic sensor elements for corrosion resistance.
2. Physical Specifications
   • Dimensions: Compact design (~150 mm × 80 mm × 50 mm) for integration into gas panels or tool manifolds.
   • Weight: 1.2–2.0 kg (optimized for minimal footprint).
3. Operating Parameters
   • Flow Range: 0.1–1000 sccm (standard cubic centimeters per minute) with ±1% accuracy.
   • Pressure Range: 0–100 psig (compatible with high-pressure gas delivery systems).
   • Temperature Tolerance: -10°C to 70°C (operational).
   • Response Time: <500 ms for full-scale adjustment.
4. Gas Compatibility
   • Supports inert (Ar, N₂), corrosive (Cl₂, HF), and reactive (O₂, NH₃, WF₆) gases.
   • Compatible with ultra-high-purity (UHP) gases (99.999% purity).
5. Integration & Control
   • Tool Platforms: AMAT Centura®, Endura®, or Producer® platforms.
   • Interfaces: Analog (4–20 mA) or digital (RS-485, EtherCAT) communication for integration with tool PLCs.
   • Calibration: Field-adjustable via onboard diagnostics or AMAT proprietary software.
6. Certifications & Standards
   • Complies with SEMI F20-0703 (gas system standards) and SEMI S2/S8 (safety).
   • CE/UL certified; RoHS/REACH compliant.
7. Lifetime & Maintenance
   • Service Life: 5–10 years (dependent on gas aggressiveness and duty cycle).
   • Maintenance: Annual calibration; replace seals every 2–3 years.

Functional Overview

The AMAT 0100-09145 is critical for maintaining precise gas flow control in semiconductor fabrication processes, ensuring repeatable and defect-free wafer processing. Key functionalities include:

1. Precision Gas Delivery
   • Enables sub-nanometer layer uniformity in deposition processes (e.g., ALD, CVD) or precise etch rate control (e.g., plasma etching).
   • Feedback loop adjusts flow rates in real time to compensate for pressure/temperature fluctuations.
2. Multi-Gas Compatibility
   • Engineered for use with aggressive and pyrophoric gases (e.g., SiH₄, WF₆) in advanced logic and memory node fabrication (3nm/5nm).
3. Process Stability
   • Minimizes flow deviations (<±1%) during critical steps, such as gate oxide formation or spacer etching.
   • Reduces particle generation through smooth internal surfaces and laminar flow design.
4. Safety Features
   • Leak detection algorithms and fail-safe shutoff to prevent hazardous gas releases.
   • Compatible with factory-wide gas monitoring systems.
5. Applications
   • Etch Processes: Controls Cl₂, HBr, or CF₄ flow for anisotropic etches in FinFET or 3D NAND structures.
   • Deposition: Manages precursor gases (e.g., TEOS, TMB) for dielectric or metal film growth.
   • Chamber Cleaning: Regulates NF₃/O₂ mixtures for in situ plasma cleans.