AMAT 0100-71275 Gas distribution component

AMAT 0100-71275: Technical Specifications

1. Component Type
   • Category: Gas Distribution Assembly or Showerhead Module
   • Purpose: Delivers uniform process gas flow into the chamber for deposition (CVD/ALD) or plasma etching.
   • Material: Anodized aluminum, quartz, or ceramic-coated stainless steel (corrosion-resistant for aggressive chemistries).
2. Physical Specifications
   • Diameter: 300–450 mm (matched to 200mm/300mm wafer platforms).
   • Thickness: 20–30 mm (multi-zone design for gas distribution).
   • Weight: 5–8 kg (optimized for thermal stability and easy handling).
3. Operating Parameters
   • Flow Rate: 10–1000 sccm per gas channel (adjustable via software control).
   • Temperature Range: 50°C to 500°C (compatible with heated gas delivery).
   • Pressure Tolerance: Operates from atmospheric pressure to high vacuum (≤ 10⁻⁶ Torr).
4. Gas Compatibility
   • Supports inert (Ar, N₂), reactive (SiH₄, O₂, NH₃), and corrosive (Cl₂, CF₄, WF₆) gases.
   • Coated surfaces prevent particle generation or gas adsorption.
5. Integration & Control
   • Tool Compatibility: AMAT Centura® or Endura® platforms for etch or CVD processes.
   • Control Interface: Integrated with the tool’s PLC for automated flow/pressure adjustments.
   • Sensors: Built-in pressure and temperature feedback for real-time gas distribution control.
6. Certifications & Standards
   • Compliant with SEMI F20 (gas delivery standards) and SEMI S2/S8 (safety).
   • REACH/RoHS compliant.
7. Lifetime & Maintenance
   • Service Life: 5,000–8,000 process hours (depends on gas aggressiveness).
   • Maintenance: Quarterly cleaning with plasma (NF₃/O₂) or wet chemistry (HF/H₂O); inspect for clogged gas ports.

Functional Overview

The AMAT 0100-71275 is a critical subsystem for precise gas delivery in semiconductor manufacturing, ensuring uniform processing across the wafer. Key functionalities include:

1. Gas Uniformity Control
   • Distributes gas evenly through thousands of micro-pores or channels, achieving <±2% film thickness uniformity in CVD/ALD processes (e.g., SiO₂, SiN).
2. Plasma Compatibility
   • Acts as an RF electrode in plasma-enhanced processes (e.g., PECVD or etch), sustaining stable plasma density for high-aspect-ratio structures.
3. Thermal Management
   • Maintains temperature uniformity across the showerhead to prevent gas condensation or thermal drift.
4. Process Flexibility
   • Supports multi-step processes by switching gases dynamically (e.g., alternating precursors for ALD layers).
   • Compatible with advanced node requirements (3nm/2nm logic, 3D NAND).
5. Applications
   • Deposition: 
     • PECVD of low-k dielectrics or SiCOH films.
     • ALD of High-κ oxides (HfO₂, ZrO₂) for gate stacks.
   • Etch: 
     • Uniform gas delivery for anisotropic Si or oxide etching.
   • Chamber Cleaning: 
     • Facilitates NF₃/O₂ plasma cleans to remove chamber deposits.

Critical Notes

• Safety: Use AMAT-approved protocols for handling gas lines to prevent leaks or cross-contamination.
• Calibration: Regular flow calibration is required to maintain process repeatability.