AMAT 0190-30354 Temperature control module

AMAT 0190-30354: Technical Specifications

1. Component Type
   • Category: Temperature Control Module or Thermal Management Subsystem
   • Purpose: Regulates wafer or chamber temperature during high-precision processes like annealing, deposition, or curing.
   • Material: High-purity silicon carbide (SiC) or aluminum nitride (AlN) for thermal stability and corrosion resistance.
2. Physical Specifications
   • Dimensions: Compact modular design (~250 mm × 150 mm × 50 mm) for integration into cluster tools.
   • Heating Zones: 3–6 independent zones for edge-to-center temperature uniformity.
   • Weight: 4–7 kg (lightweight yet rugged for vacuum environments).
3. Operational Parameters
   • Temperature Range: Ambient to 800°C (with ±0.5°C stability).
   • Ramp Rate: Up to 30°C/sec for rapid thermal processing (RTP).
   • Power Input: 208–480 VAC, 3-phase, up to 15 kW.
   • Cooling: Liquid-cooled (deionized water) for efficient heat dissipation.
4. Environmental Compatibility
   • Vacuum Operation: Stable in high-vacuum conditions (≤ 10⁻⁷ Torr).
   • Gas Compatibility: Resistant to oxidative (O₂), corrosive (Cl₂), and inert (N₂, Ar) environments.
5. Integration & Control
   • Tool Platforms: Compatible with AMAT Centura® or Producer® systems.
   • Sensors: Integrated RTDs (Resistance Temperature Detectors) and thermocouples for real-time feedback.
   • Communication: Supports SECS/GEM protocols for automated fab control.
6. Certifications & Standards
   • Complies with SEMI S2/S8 (safety) and SEMI F47 (power quality).
   • RoHS/REACH compliant.
7. Lifetime & Maintenance
   • Service Life: 5–8 years (depending on thermal cycling frequency).
   • Maintenance: Annual inspection of heating elements and calibration of sensors.

Functional Overview

The AMAT 0190-30354 ensures precise thermal control in semiconductor manufacturing, critical for processes requiring nanometer-scale precision. Key functionalities include:

1. Uniform Thermal Processing
   • Multi-zone heating eliminates temperature gradients, enabling ±1% uniformity for advanced nodes (e.g., 3nm FinFETs).
   • Precludes wafer warping during high-temperature steps like epitaxial growth.
2. Rapid Thermal Annealing (RTA)
   • Enables millisecond-level temperature spikes for dopant activation while minimizing thermal budget.
3. Process Stability
   • Maintains stable temperatures during deposition (CVD, ALD) or oxide growth, ensuring film uniformity and stoichiometry.
4. Energy Efficiency
   • Optimized power distribution reduces energy consumption during steady-state operations.
5. Applications
   • Logic/DRAM: Dopant activation, gate oxide formation, and metal reflow.
   • 3D NAND: Thermal cycling for multilayer stack stress relief.
   • Advanced Packaging: Reflow soldering and wafer-level bonding.
   • Power Devices: High-temperature processing for SiC/GaN semiconductors.