AMAT 0190-73524 Plasma chamber liner

AMAT 0190-73524: Technical Specifications

1. Component Type
   • Category: Plasma Chamber Liner or Deposition Shield Kit
   • Purpose: Protects chamber walls from plasma erosion and process byproduct accumulation during etch or deposition processes.
   • Material: High-purity alumina (Al₂O₃), yttria (Y₂O₃), or silicon carbide (SiC) coatings for extreme chemical/thermal resistance.
2. Physical Specifications
   • Dimensions: Custom-fit for AMAT process chambers (e.g., diameter 400–500 mm for 300mm wafer tools).
   • Thickness: 5–15 mm (multi-segment design for easy replacement).
   • Weight: 8–15 kg (depending on chamber size and material).
3. Operational Parameters
   • Temperature Tolerance: Up to 600°C (continuous operation).
   • Plasma Compatibility: Withstands high-density plasma (HDP) environments (e.g., RF power density ≤ 5 W/cm²).
   • Chemical Resistance: Resists aggressive etchants (Cl₂, HBr, CF₄) and deposition precursors (WF₆, TEOS, NH₃).
4. Integration & Compatibility
   • Tool Platforms: Compatible with AMAT Centura® or Endura® etch/deposition systems.
   • Interfaces: Pre-aligned mounting points for fast installation (<30 minutes downtime).
   • Particle Control: Engineered surface finish (Ra ≤ 0.4 µm) to minimize particle generation.
5. Certifications & Standards
   • Complies with SEMI F47-0706 (particle shedding standards).
   • REACH/RoHS compliant (no hazardous coatings).
6. Lifetime & Maintenance
   • Service Life: 3,000–5,000 process hours (dependent on plasma intensity).
   • Cleaning: Dry plasma clean (e.g., O₂/NF₃) or wet chemical clean (dilute HF or IPA).

Functional Overview

The AMAT 0190-73524 is a consumable component critical to maintaining process consistency and chamber longevity in semiconductor manufacturing. Key functionalities include:

1. Chamber Protection
   • Shields metallic chamber walls from reactive plasma species, preventing contamination from metal sputtering.
   • Reduces metallic contamination on wafers (<1 ppb levels), crucial for high-k/metal gate processes.
2. Byproduct Management
   • Traps and contains etch/deposition byproducts (e.g., polymers, metal halides), minimizing flaking and defect generation.
   • Extends time between chamber wet cleans (up to 2x longer intervals).
3. Process Uniformity
   • Maintains consistent plasma impedance and gas flow dynamics, ensuring etch/deposition uniformity (e.g., <±2% thickness variation).
4. Cost Efficiency
   • Modular design allows replacement of individual liner segments instead of the entire kit, reducing consumable costs.
5. Applications
   • Etch Processes: 
     • Dielectric etch (SiO₂, Si₃N₄) for advanced logic nodes (3nm/2nm).
     • High-aspect-ratio etch (HAR) for 3D NAND vertical channels.
   • Deposition Processes: 
     • PECVD of low-k dielectrics or SiN spacer layers.
     • ALD of ultrathin barriers (e.g., TaN, TiN).

Critical Notes

• Safety: Handle with cleanroom protocols to avoid introducing particles; pre-bake liners before installation to outgas contaminants.
• Compatibility: Verify material compatibility with specific chemistries (e.g., Y₂O₃ for fluorine-based plasmas, Al₂O₃ for chlorine-based etches).