Applied Materials 0190-72680 (Hypothetical Example: Advanced Gas Delivery System)
Application Scope:
Used in plasma-enhanced CVD (Chemical Vapor Deposition) or etch systems for sub-7nm logic and 3D NAND fabrication.
Key Technical Parameters
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Category
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Specifications
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Gas Types Supported
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WF₆, SiH₄, NH₃, Cl₂, Ar, N₂, O₂
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Flow Control
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0.1–5000 sccm (±0.5% accuracy) via MFC
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Pressure Range
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0.1 mTorr to 760 Torr (dual-range Baratron®)
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Temperature Control
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20–400°C (±0.1°C stability)
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Material Compatibility
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Aluminum-free surfaces, YSZ-coated valves
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Connections
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VCR® fittings, SEMI E72-compliant
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Interface Protocol
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RS-485/Modbus, integrated with AMAT E3™
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Functional Highlights
- Precision Process Control
- Enables atomic-level deposition/etch uniformity through real-time gas mixing feedback.
- Critical for high-k dielectric layers (e.g., HfO₂) and metal gate patterning.
- Safety & Contamination Mitigation
- Leak detection <1 ppm with integrated FTIR spectroscopy.
- In-situ self-cleaning function for corrosive byproducts (e.g., W residues).
- Advanced Diagnostics
- AI-powered predictive maintenance for MFC drift compensation.
- Fault-tolerance design for 24/7 fab operation (MTBF >50,000 hours).
- Cluster Tool Integration
- Compatible with AMAT Producer® GT and Centura® platforms.
- Supports EUV lithography-compatible processes.
Industry Standards Compliance
- SEMI S2/S8 (safety)
- ISO 9001:2015 (quality)
- ANSI/ISA 88 for batch process automation
Typical Use Cases:
- Etch step tuning for FinFET sidewall passivation
- Low-temperature SiNx liner deposition in 3D NAND
- Precursor delivery for atomic layer etching (ALE)
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