APPLIED MATERIALS 0190-74401 PVD System

Applied Materials Endura® PVD System
(Illustrative Example for Advanced Thin Film Deposition)

Technical Specifications:

1. Process Technology
   • Physical Vapor Deposition (PVD)
   • Target Materials: Al, Cu, TiN, TaN, Co, and advanced alloys
   • Film Thickness Range: 5 nm to 500 nm (±0.2 nm uniformity)
2. Wafer Handling
   • Substrate Size: 200mm/300mm wafers
   • Throughput: Up to 120 wafers/hour
   • Vacuum Level: ≤ 1×10⁻⁸ Torr base pressure
3. Precision Control
   • Temperature Range: -50°C to 600°C (multi-zone heating)
   • RF Power: 2-10 kW with <1% stability
   • Deposition Rate: 1-50 Å/sec (adjustable via closed-loop plasma monitoring)
4. Advanced Features
   • Magnetron Sputtering with IMP™ (Ionized Metal Plasma) technology
   • Integrated metrology for in-situ thickness & stress measurement
   • Reactive Gas System (Ar, N₂, O₂) with mass flow controllers
5. Automation
   • AMAT E3™ Equipment Engineering System
   • SECS/GEM compatibility for Industry 4.0 integration
   • Predictive maintenance via AI-based sensor analytics

Functional Applications:

• Logic Chips: Metal gate/interconnect layers
• Memory Devices: Barrier layers for 3D NAND and DRAM
• Advanced Packaging: TSV (Through-Silicon Via) metallization
• Emerging Technologies: MRAM and ferroelectric deposition

Key Advantages:

• Industry-leading <0.5% defect density
• 30% lower argon consumption vs. previous generations
• 99.5% uptime with quick-change target assemblies