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ASML DPEM-440A 4022.455.16371 Plasma process monitoring module

$399.00

In stock

💥Name: Module/Controller/Touchpad/Driver/Load cell

Model: DPEM-440A 4022.455.16371

🚚Delivery time: goods in stock

3️⃣6️⃣5️⃣Warranty: 12 months

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Applied Materials DPEM-440A (Hypothetical Overview)

(Plasma Process Monitoring & Control Module)


Key Technical Parameters

Category
Specifications
Power Delivery
100–5000 W RF power range, ±0.1% stability
Frequency Support
2 MHz, 13.56 MHz, 60 MHz (multi-frequency matching)
Plasma Diagnostics
Real-time Langmuir probe & OES (Optical Emission Spectroscopy) integration
Voltage/Current Range
0–5000 V DC bias / 0–100 A pulsed operation
Communication Interface
Gigabit Ethernet, SECS/GEM, AMAT E3™ API
Operating Environment
Temperature: 10–40°C, Humidity: <80% non-condensing
Compliance Standards
SEMI S2, CE, UL 61010-1

Functional Capabilities

  1. Plasma Process Optimization
    • Dynamic impedance tuning for unstable plasma states in high-aspect-ratio etching (e.g., 3D NAND channels).
    • Closed-loop control of ion density (>10¹⁰ ions/cm³) and electron temperature (1–10 eV).
  2. Advanced Fault Detection
    • Arc suppression with <10 µs response time (critical for HBM/DRAM capacitor etching).
    • Particulate monitoring via laser scattering (<0.1 µm sensitivity).
  3. Data Integration
    • Multi-sensor fusion (pressure, temperature, RF harmonics) for machine learning-based process drift prediction.
    • Compatible with Applied Materials BigLake™ analytics platform.
  4. Multi-Process Flexibility
    • Supports dual-frequency CCP (Capacitively Coupled Plasma) and ICP (Inductively Coupled Plasma) modes.
    • Recipe storage for >500 process steps (logic/memory transitions).

Typical Applications

  • Advanced Etching
    • Atomic-layer precise etching (ALE) for GAA (Gate-All-Around) transistor Fin formation.
    • Low-k dielectric patterning in 3nm node BEOL (Back-End-of-Line) processes.
  • Thin Film Deposition
    • Plasma-enhanced ALD (Atomic Layer Deposition) for <1nm barrier layers.
    • SiCOH low-k film curing in EUV lithography-compatible steps.
  • Yield Management
    • In-situ plasma uniformity mapping across 300mm wafers.
    • Rogue chamber condition monitoring for preventive maintenance.

Critical Notes:

  1. The DPEM-440A likely operates within cluster tools like the Centura® or Producer® GT platforms.
  2. Subcomponent P/N 4022.455.16371 may indicate a country-specific variant or calibration kit.
  3. Always verify compatibility with host systems (e.g., AMAT Endura®, Tetra™).

Safety Requirements:

  • Requires periodic calibration (6-month cycle recommended).
  • Only trained personnel should handle HV connections and plasma-facing components.
ABB

ABB CI854A 3BSE030221R1

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