LAM 778-900046-343 Product Introduction
1. Product Overview
The LAM 778-900046-343 is a high-precision RF matching network engineered for LAM Research’s semiconductor plasma processing tools. It serves the semiconductor manufacturing industry, focusing on impedance matching between RF power sources and plasma chambers—critical for stable plasma generation in processes like etching, deposition, and ion implantation.
Integrating automated tuning mechanisms and rugged components, it ensures efficient RF power transfer (minimizing power loss) while withstanding the harsh conditions of semiconductor fabs (e.g., high-frequency electromagnetic interference, cleanroom environments). Compatibility with LAM’s plasma etch/deposition systems makes it a core component for maintaining process uniformity and yield in wafer manufacturing.
2. Technical Parameters (Table)
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Category
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Specification
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Device Type
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Automated RF matching network (for semiconductor plasma tools)
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RF Frequency Range
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13.56 MHz (standard); Compatible with 2 MHz/27 MHz (optional tuning)
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Input Power Rating
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0–3000 W (continuous); 0–4500 W (pulsed, ≤10 ms duty cycle)
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Impedance Matching Range
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Input impedance: 50 Ω (standard); Load impedance: 10–500 Ω (adjustable)
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Tuning Speed
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≤100 ms (for 95% impedance match); Tuning accuracy: ±2% of target impedance
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Control Interface
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RS485 (Modbus RTU); Ethernet (TCP/IP, for fab automation integration)
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Power Supply
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24 V DC (20–28 V DC); Power consumption: ≤50 W (operating), ≤10 W (standby)
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Environmental Ratings
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Operating temperature: 15°C to +40°C (59°F to +104°F); Storage temperature: -20°C to +60°C (-4°F to +140°F); Humidity: 30%–60% (non-condensing, cleanroom compliant); Protection class: IP54 (enclosure)
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Mechanical Design
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Mounting: Tool-integrated (LAM plasma chambers); Housing material: Anodized aluminum; Dimensions: 280 mm (W) × 180 mm (H) × 320 mm (D); Weight: ~8 kg (17.6 lbs)
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Certifications
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CE; SEMI S2/S8 (semiconductor equipment safety); RoHS compliant (lead-free)
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3. Product Specifications & Features
3.1 Core Specifications
The LAM 778-900046-343 is optimized for 13.56 MHz RF systems (the industry standard for semiconductor plasma processes), with a 0–3000 W power rating fitting mid-range etch/deposition tools (e.g., 200mm/300mm wafer processing). Its 10–500 Ω impedance matching range adapts to dynamic plasma loads (impedance changes during wafer processing), ensuring consistent power delivery to the plasma chamber.
The ≤100 ms tuning speed minimizes process interruptions when plasma conditions shift, while ±2% tuning accuracy maintains uniform plasma density—critical for wafer feature uniformity (e.g., 5nm/7nm chip manufacturing). The cleanroom-compliant design (low particle emission) meets semiconductor fab requirements, avoiding wafer contamination.
3.2 Key Features
- Automated Impedance Tuning: Eliminates manual adjustments, reducing human error and ensuring 24/7 consistent performance in high-volume fabs.
- High Power Efficiency: ≥95% RF power transfer efficiency minimizes energy loss, lowering fab operational costs.
- Fab Automation Compatibility: Ethernet/RS485 interfaces integrate with fab-wide control systems (e.g., SEMI E10), enabling remote monitoring and recipe-based tuning.
- Cleanroom Reliability: IP54 enclosure and low-outgassing materials prevent particle contamination, aligning with SEMI cleanroom standards.
- Tool-Specific Integration: Designed for LAM plasma tools (e.g., Flex™ etch systems), ensuring seamless mechanical/electrical compatibility and reducing integration time.
4. Other LAM Research RF & Plasma Components
LAM Research offers complementary components for semiconductor plasma processing:
- LAM 778-900046-344: Higher-power variant (0–5000 W) for high-density plasma etch tools (e.g., 300mm advanced logic wafer processing).
- LAM 778-900046-342: Low-power model (0–1000 W) for small-batch R&D plasma tools (e.g., prototype wafer testing).
- LAM 779-800021-101: RF power sensor (13.56 MHz, 0–6000 W) for real-time power monitoring in plasma systems.
- LAM 778-900046-350: Dual-frequency matching network (13.56 MHz + 27 MHz) for advanced plasma processes (e.g., multi-step etching).
- LAM 780-700032-001: Plasma chamber matching capacitor (high-voltage, low-loss) for LAM etch/deposition tools.
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