Toshiba 2N3A3620-B Product Introduction
1. Product Overview
The Toshiba 2N3A3620-B is a high-performance insulated gate bipolar transistor (IGBT) power module designed for medium-power industrial applications requiring efficient energy conversion and reliable switching. As part of Toshiba’s 3rd-generation IGBT product lineup, it integrates advanced IGBT chips and fast-recovery diodes (FRDs) in a compact, thermally efficient package—making it ideal for use in variable frequency drives (VFDs), uninterruptible power supplies (UPS), solar inverters, and industrial motor control systems.
This module balances high current-carrying capacity with low switching losses, enabling energy-efficient operation in systems that run continuously (e.g., industrial pumps, HVAC compressors, renewable energy converters). Its robust design and wide operating temperature range ensure stable performance in harsh industrial environments, while the standard package footprint simplifies integration into existing circuit designs.
2. Technical Parameters (Table)
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Category
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Specification
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Device Type
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IGBT power module (half-bridge configuration with built-in FRDs)
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Voltage Ratings
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Collector-emitter voltage (Vce): 600 V; Gate-emitter voltage (Vge): ±20 V
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Current Ratings
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Collector current (Ic): 30 A (DC, Tc=25°C); 20 A (DC, Tc=100°C); Pulsed current (Icp): 60 A (1ms, Tc=25°C)
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Power Dissipation
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Maximum power dissipation (Pd): 120 W (Tc=25°C); Derated to 48 W (Tc=100°C)
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Switching Characteristics
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Turn-on delay time (td(on)): ≤50 ns; Rise time (tr): ≤100 ns; Turn-off delay time (td(off)): ≤100 ns; Fall time (tf): ≤80 ns (Test conditions: Vce=300 V, Ic=20 A, Rg=10 Ω)
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Thermal Resistance
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Junction-to-case (Rth(j-c)): 0.83 K/W; Junction-to-ambient (Rth(j-a)): 6.25 K/W (with recommended heatsink)
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Operating Temperature
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Junction temperature (Tj): -40°C to 150°C; Storage temperature (Tstg): -40°C to 150°C
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Package Type
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TO-247-4 (4-pin, isolated baseplate); Footprint: 19.1 mm × 15.7 mm × 4.5 mm
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Isolation Voltage
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Baseplate-to-lead isolation voltage (Viso): 2500 Vrms (1min)
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Certifications
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RoHS compliant (lead-free, halogen-free); UL recognized (E249416)
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3. Product Specifications & Features
3.1 Core Specifications
The Toshiba 2N3A3620-B is engineered for medium-power conversion tasks, with key electrical ratings tailored to industrial needs. Its 600 V collector-emitter voltage (Vce) makes it suitable for low-to-medium voltage systems (e.g., 380–480 VAC industrial grids), while the 30 A DC current rating (Tc=25°C) supports motors and converters up to ~10 kW. The built-in FRDs eliminate the need for external freewheeling diodes, reducing circuit complexity and component count.
In terms of switching performance, the module’s fast turn-on/off times (≤100 ns delay, ≤100 ns rise/fall) minimize switching losses—critical for high-frequency applications (e.g., 20–50 kHz inverters in solar power systems). The low thermal resistance (Rth(j-c)=0.83 K/W) ensures efficient heat transfer to a heatsink, preventing junction overheating even under full-load conditions. The TO-247-4 package’s isolated baseplate simplifies heatsink mounting and reduces ground loop interference, a common issue in power electronics.
3.2 Key Features
- High Energy Efficiency: 3rd-generation Toshiba IGBT chips feature a thin-wafer design and optimized doping profile, reducing on-state voltage (Vce(sat) ≤1.2 V at Ic=20 A, Tj=25°C) and switching losses. This translates to lower power dissipation in VFDs and inverters, cutting energy costs by 5–10% compared to older IGBT modules.
- Robust Thermal Performance: With a junction temperature range of -40°C to 150°C and derated power dissipation up to 100°C, the module operates reliably in high-temperature industrial environments (e.g., factory floors, outdoor solar inverters). The TO-247-4 package’s large copper baseplate enhances heat dissipation, reducing the risk of thermal runaway.
- Simplified Circuit Design: Built-in fast-recovery diodes (FRDs) with low reverse recovery charge (Qrr ≤50 nC) eliminate the need for external diodes, saving PCB space and reducing component costs. The 4-pin package also includes a dedicated gate pin for stable gate drive, minimizing switching noise.
- High Isolation & Safety: 2500 Vrms baseplate-to-lead isolation meets industrial safety standards, protecting operators and equipment from electrical shock. RoHS compliance ensures compatibility with global environmental regulations, making it suitable for export markets.
- Drop-In Compatibility: The TO-247-4 package footprint is industry-standard, allowing direct replacement of older IGBT modules (e.g., Toshiba 2N3A3610-B, other manufacturers’ 600 V/30 A IGBTs) without modifying PCB layouts—simplifying retrofits and maintenance.
4. Other Toshiba IGBT & Power Modules
Toshiba offers a range of complementary power modules to the 2N3A3620-B, covering low-to-high power applications:
- 2N3A3610-B: A lower-current variant (20 A DC, 600 V), ideal for small VFDs and consumer-grade inverters.
- 2N3A1220-B: A 1200 V IGBT module (30 A DC), designed for high-voltage systems like industrial UPS and wind turbine converters.
- MG25Q2YS40: A SiC MOSFET module (25 A, 1200 V) for ultra-high-efficiency applications (e.g., EV chargers, high-frequency inverters).
- TPD4162F: A gate driver IC optimized for Toshiba IGBT modules, providing overcurrent protection and stable gate voltage control.
- PKH200F60: A high-power IGBT module (200 A, 600 V) in a press-fit package, suitable for large industrial drives and traction systems.
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