AMAT 0190-49518 Process room heater component

AMAT 0190-49518: Technical Specifications

1. Component Type
   • Category: Process Chamber Heater Assembly or Thermal Control Subsystem
   • Purpose: Provides precise temperature control for wafers during high-temperature processes (e.g., anneals, oxidation, or epitaxial growth).
   • Material: High-purity quartz, silicon carbide (SiC), or graphite (coated with SiC for contamination resistance).
2. Physical Specifications
   • Dimensions: Optimized for 200mm/300mm wafer chambers (~300–400 mm diameter).
   • Heating Element: Multi-zone resistive heating (e.g., 3–6 zones for uniform thermal distribution).
   • Weight: 10–15 kg (integrated with cooling channels for thermal management).
3. Operational Parameters
   • Temperature Range: 100°C to 1,200°C (adjustable with ±1°C stability).
   • Ramp Rate: Up to 50°C/minute (heating and cooling).
   • Power Supply: 3-phase AC input, 480V/60A (configurable for global voltage standards).
   • Cooling: Water-cooled jacket or gas-assisted quenching for rapid cooldown.
4. Environmental Compatibility
   • Vacuum Operation: Compatible with base pressure ≤ 10⁻⁶ Torr.
   • Gas Environment: Resistant to oxidative (O₂), corrosive (HCl), and reducing (H₂) atmospheres.
5. Integration & Control
   • Tool Platforms: AMAT Centura® or Vantage® series for thermal processing.
   • Sensors: Integrated thermocouples (Type K or C) and RTDs (Resistance Temperature Detectors) for closed-loop feedback.
   • Communication: SECS/GEM or Ethernet/IP protocols for integration with fab-wide automation.
6. Certifications & Standards
   • Complies with SEMI S2/S8 (safety and ergonomic standards).
   • RoHS/REACH compliant (hazardous material-free).
7. Lifetime & Maintenance
   • Service Life: ~5–7 years (depends on thermal cycling frequency).
   • Maintenance: Quarterly inspection of heating elements and electrical insulation; annual recalibration of sensors.

Functional Overview

The AMAT 0190-49518 is critical for advanced thermal processing in semiconductor manufacturing, enabling precise control over wafer temperature for high-yield device fabrication. Key functionalities include:

1. Uniform Thermal Distribution
   • Multi-zone heating compensates for edge-to-center temperature gradients, achieving ±1% uniformity across the wafer.
   • Enables defect-free annealing of advanced materials (e.g., SiGe, GaN).
2. Rapid Thermal Processing (RTP)
   • Supports millisecond-level temperature spikes for ultra-shallow junction formation in logic devices (e.g., 3nm FinFETs).
   • Minimizes thermal budget to prevent dopant diffusion.
3. High-Temperature Stability
   • Maintains stable temperatures during epitaxial growth (e.g., silicon or III-V compounds) or oxidation steps (gate oxide formation).
4. Process Flexibility
   • Configurable for both batch and single-wafer processing.
   • Supports ambient, low-pressure, or inert gas environments.
5. Applications
   • Front-End Processes: 
     • Thermal oxidation/nitridation of dielectric layers.
     • Activation anneals for ion-implanted dopants.
   • Advanced Packaging: 
     • Reflow soldering for 3DIC structures.
     • Wafer-level bonding for MEMS or sensors.
   • Power Devices: 
     • High-temperature epitaxy for SiC or GaN power semiconductors.

Critical Notes

• Safety: Includes over-temperature interlocks and emergency purge systems to prevent thermal runaway.
• Calibration: Requires periodic alignment with traceable reference sensors to ensure accuracy.